High-frequency analysis of laser-integrated lumped electroabsorotion modulators

IEE Proceedings: Optoelectronics

Volumn 152, Issue 2, 2005, Pages 125-130

  Gerlach, Philipp ^a   Peschke, M ^a,b   Hanke, C ^b   Saravanan, B K ^b   Michalzik, R ^a  

^a UNIVERSITY OF ULM   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CONDUCTIVE MATERIALS; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTROOPTICAL EFFECTS; FINITE DIFFERENCE METHOD; OPTIMIZATION; TELECOMMUNICATION SYSTEMS;

ELECTRO-OPTICAL RESPONSE; ELECTROABSORPTION MODULATORS (EAM); OHMIC CURRENTS; OHMIC LOSSES;

MODULATORS;

EID: 18444410768     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20045029     Document Type: Article

References (9)

1. Lewén, R., Irmscher, S., Westergren, U., Thylén, L., and Eriksson, U.: 'Ultra high-speed segmented traveling-wave electroabsorption modulators'. Proc. Optical Fiber Communications Conf., OFC 2003, postdeadline paper PD38, Atlanta, GA, USA, February 2003
2. Shirai, M., Arimoto, H., Watanabe, K., Taike, A., Shinoda, K., Shimizu, J., Sato, H., Ido, T., Tsuchia, T., Aoki, M., Tsuji, S., Sasada, N., Tada, S., and Okayasu, M.: '40Gbit/s electroabsorption modulators with impedance-controlled electrodes', Electron. Lett., 2003, 39, (9), pp. 733-735
3. Kawanishi, H., Yamauchi, Y., Mineo, N., Shibuya, Y., Murai, H., Yamada, K., and Wada, H.: 'EAM-integrated DFB laser modules with more than 40-GHz bandwidth', IEEE Photonics Technol. Lett., 2001, 13, (9), pp. 954-956
4. Stegmueller, B., and Hanke, C.: 'High-frequency properties of 1.3 μm and 1.55 μm electro-absorption modulators integrated with DFB lasers based on identical MQW-double stack active layer'. Proc. Lasers and Electro-Optics Society Ann. Meet., LEOS 2002, Glasgow, Scotland, UK, November 2002, Vol. 1, pp. 115-116
5. Gerlach P., Peschke, M., and Michalzik, R.; 'High-frequency performance optimization of DFB laser integrated electroabsorption modulators'. Proc. Semiconductor and Integrated Opto-Electronics Conf., SIOE 2004, Cardiff, Wales, UK, April 2004, p. 41
6. Lewén, R., Irmscher, S., and Eriksson, U.: 'Microwave CAD circuit modeling of a traveling-wave electroabsorption modulator', IEEE Trans. Microw. Theory Tech., 2003, 51, (4), pp. 1117-1127
7. Stegmueller, B., and Hanke, C.: 'Integrated 1.3 μm DFB laser electroabsorption modulator based on identical MWQ double-stack active layer with 25 GHz modulation performance', IEEE Photonics Technol. Lett., 2003, 15, (8), pp. 1029-1031
8. Sze, S.M.: 'Physics of semiconductor devices', (Wiley-Interscience, New York, NY, USA, 1981, 2nd edn.)
9. Peschke, M., Knoedl, T., and Stegmueller, B.: 'Simulation and design of an active MQW layer with high static gain and absorption modulation'. Proc. Numerical Simulation of Semiconductor Devices, NUSOD 2003, Tokyo, Japan, October 2003, pp. 15-16