Radiation damage studies on STAR250 CMOS sensor at 300 keV for electron microscopy

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 565, Issue 1, 2006, Pages 139-143

  Faruqi, A R ^a   Henderson, R ^a   Holmes, J ^b  

^a MRC LABORATORY OF MOLECULAR BIOLOGY   (United Kingdom)

^b Sira Ltd   (United Kingdom)

Author keywords

CMOS; Electron microscopy; Pixel detectors; Radiation hardness

Indexed keywords

CMOS INTEGRATED CIRCUITS; DETECTORS; ELECTRON IRRADIATION; ELECTRON MICROSCOPY; IMAGE ANALYSIS; RADIATION HARDENING; SENSORS;

DARK CURRENT; ELECTRON CRYOMICROSCOPY; HIGH-RESOLUTION IMAGES; PIXEL DETECTORS; RADIATION TOLERANCE;

RADIATION DAMAGE;

EID: 33747419985     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.04.066     Document Type: Article

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