SIMS round-robin study of depth profiling of arsenic implants in silicon

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 465-469

  Tomita, Mitsuhiro ^a   Hasegawa, T ^b   Hashimoto, S ^b   Hayashi, S ^b   Homma, Y ^b   Kakehashi, S ^b   Kazama, Y ^b   Koezuka, K ^b   Kuroki, H ^b   Kusama, K ^b   Li, Z ^b   Miwa, S ^b   Miyaki, S ^b   Okamoto, Y ^b   Okuno, K ^b   Saito, S ^b   Sasaki, S ^b   Shichi, H ^b   Shinohara, H ^b   Toujou, F ^b   Ueki, Y ^b   Yamamoto, Y ^b   more..

^a TOSHIBA CORPORATION   (Japan)

^b NONE

Author keywords

Arsenic; Depth profiling; ISO; Round robin; RSF; SIMS

Indexed keywords

CALIBRATION; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SILICON;

DEPTH PROFILING;

ARSENIC;

EID: 12244272386     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00702-X     Document Type: Conference Paper

References (2)

1. Y. Okamoto, et al., in: Proceedings of the XIth Secondary Ion Mass Spectrometry (SIMS), Wiley, New York, 1998, p. 1047.
2. F. Toujou, M. Tomita, Y. Okamoto, S. Hayashi, A. Yamamoto, Y. Homma, in: Proceedings of the XIIth Secondary Ion Mass Spectrometry (SIMS), Elsevier, Amsterdam, 2000, p. 101.