High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 688-692

  Chi, P H ^a   Simons, D S ^a   McKinley, J M ^b   Stevie, F A ^b   Granger, C N ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMS; CESIUM; ELECTRON ENERGY LEVELS; ION BEAMS; PHOSPHORUS; POSITIVE IONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON;

ANALYTICAL SPECIES; ENERGY BANDPASS; MATRIX ION SPECIES; SAMPLE HOLDER DESIGN;

ION IMPLANTATION;

EID: 0036564794     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1463084     Document Type: Article

References (8)