Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0 0 0 1) Si faces

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 275-278

  Sun, G S ^a   Liu, X F ^a   Gong, Q C ^a   Wang, L ^a   Zhao, W S ^a   Li, J Y ^a   Zeng, Y P ^a   Li, J M ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

4H SiC; Homoepitaxial layers; Optical microscopy; Surface morphological defect

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; EPITAXIAL GROWTH; OPTICAL MICROSCOPY; RAMAN SPECTROSCOPY; SILICON CARBIDE;

4H-SIC; DEFECT DENSITY; GROOVE DEFECTS; HOMOEPITAXIAL LAYERS; NOMARSKI OPTICAL MICROSCOPY; SURFACE MORPHOLOGICAL DEFECT; TRIANGULAR DEFECTS;

SEMICONDUCTING SILICON;

EID: 33746825914     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.080     Document Type: Article

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