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Volumn 352, Issue 23-25, 2006, Pages 2328-2331

Photoelectrical properties of heterojunction devices based on transparent oxide semiconductors on silicon

Author keywords

Heterojunctions; Sputtering

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; PHOTOCURRENTS; PHOTOELECTRICITY; SEMICONDUCTOR MATERIALS; SPUTTERING; THIN FILMS;

EID: 33746825000     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.01.088     Document Type: Article
Times cited : (8)

References (14)
  • 7
    • 33746789675 scopus 로고    scopus 로고
    • P.F. Carcia, R.S. McLean, Transparent oxide semiconductor thin films transistors, PCT US Patent WO 2004/034449 A2, April 22, 2004.
  • 10
    • 33746813877 scopus 로고    scopus 로고
    • E.L. Prociow, J. Domaradzki, D. Kaczmarek, in: A. Dziedzic, L. Golonka, M. Kramkowska (Eds.), 28th International Conference of International Microelectronics and Packaging Society Poland Chapter, Wroclaw, Poland, September 26-29, 2004, Proceedings of IMAPS Poland Chapter 2004, 351.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.