Comparison of quantum well intermixing in GaAs structures using a low temperature grown epitaxial layer or a SiO2 cap

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Lee, A S W ^a   Hulko, O ^a   Thompson, D A ^a   Robinson, B J ^a   Simmons, J G ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DIFFUSION; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SILICA;

BARRIER LAYERS; LOW TEMPERATURE GROWN EPITAXIAL LAYERS; QUANTUM WELL INTERMIXING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33746802725     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2214360     Document Type: Article

References (16)

1. S. Charbonneau et al., J. Appl. Phys. 78, 3697 (1995).
2. D. G. Deppe, L. J. Guido, N. Holonyak, Jr., K. C. Hsieh, R. D. Bumham, R. L. Thornton, and T. L. Paoli, Appl. Phys. Lett. 49, 510 (1986).
3. R. G. Waters, Prog. Quantum Electron. 15, 153 (1992).
4. D. A. Thompson, J. F. Hazell, A. S. W. Lee, T. Yin, G. J. Letal, B. J. Robinson, N. Bertsch, and J. G. Simmons, Proc. SPIE 4078, 148 (2000).
5. C. Francis, F. H. Julien, J.-Y. Emery, R. Simes, and L. Goldstein, J. Appl. Phys. 75, 3607 (1994).
6. M. D. Camras, N. Holonyak Jr., R. D. Burnham, W. Streifer, D. R. Scifres, T. L. Paoli, and L. Lindstrom, J. Appl. Phys. 54, 5637 (1983).
7. J. S. Tsang, C. P. Lee, S. H. Lee, K. L. Tsai, C. M. Tsai, and J. C. Fan, J. Appl. Phys. 79, 664 (1996).
8. J. S. Tsang, C. P. Lee, S. H. Lee, K. L. Tsai, and H. R. Chen, J. Appl. Phys. 77, 4302 (1995).
9. M. R. Melloch, J. M. Woodall, E. S. Harmon, N. Otsuka, F. H. Pollack, D. D. Nolte, R. M. Feenstra, and M. A. Lutz, Annu. Rev. Mater. Sci. 25, 547 (1995).
10. P. Dreszer, W. M. Chen, K. Seendripu, J. A. Wolk, W. Walukiewicz, B. W. Liang, C. W. Tu, and E. R. Webber, Phys. Rev. B 47, 4111 (1993).
11. J. E. Haysom, P. J. Poole, R. L. Williams, S. Raymond, and G. C. Ayers, Solid State Commun. 116, 187 (2000).
12. A. S. W. Lee, D. A. Thompson, and B. J. Robinson, Semicond. Sci. Technol. 15, L41 (2000).
13. A. S. W. Lee, M. MacKenzie, D. A. Thompson, J. Bursik, B. J. Robinson, and G. C. Weatherly, Appl. Phys. Lett. 78, 3199 (2001).
14. U. Gosele and F. Moorhead, J. Appl. Phys. 52, 4617 (1981).
15. We run series of annealing experiments with different samples and proximity caps and found that deposition occurs only between III-V semiconductors and only in upward direction (↑).
16. S. S. Rao, W. P. Gilin, and K. P. Homewood, Phys. Rev. B 50, 8071 (1994).