Stress development during annealing of self-assembled InAs/GaAs quantum dots measured in situ with a cantilever beam setup

Journal of Crystal Growth

Volumn 293, Issue 2, 2006, Pages 546-549

  Hu, D Z ^a   Schaadt, D M ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. Mass transfer; A1. Nanostructures; A1. Ripening; A3. Molecular beam epitaxy; A3. Quantum dots

Indexed keywords

CANTILEVER BEAMS; DEPOSITION; MASS TRANSFER; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; STRESS RELAXATION;

OSTWALD RIPENING; RELAXATION CURVE; RIPENING; STRESS RELAXATION CURVES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33746465357     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.06.009     Document Type: Article

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