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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 9 A, 1997, Pages 5623-5627

Liquid-phase epitaxial growth of In0.35Ga0.65P on GaP substrates from Sn-rich solutions

(2) Chen, Lung Chien a Wu, Meng Chyi a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

InGaP alloy; Liquid phase epitaxy; Sn rich solutions

Indexed keywords

CARRIER CONCENTRATION; ELECTRON EMISSION; ELECTRON TRANSITIONS; LIQUID PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; SURFACE STRUCTURE; TIN;

EMISSION PEAKS; SUPERCOOLING TECHNIQUE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031219968 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.5623 Document Type: Article

Times cited : (2)

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