Integer quantum Hall effect on hydrogen-passivated silicon (1 1 1) surfaces

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 34, Issue 1-2, 2006, Pages 701-702

  Eng, K ^a   McFarland, R N ^a   Kane, B E ^a  

^a LABORATORY FOR PHYSICAL SCIENCES   (United States)

Author keywords

High mobility; Quantum Hall effect; Silicon

Indexed keywords

ELECTRON MOBILITY; HALL EFFECT; HYDROGEN; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SILICON;

HIGH MOBILITY; LANDAU FILLING FACTOR; QUANTUM HALL EFFECT;

QUANTUM THEORY;

EID: 33746396552     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.03.069     Document Type: Article

References (7)

1. Yablonovitch E., Allara D.L., Chang C.C., Gmitter T., and Bright T.B. Phys. Rev. Lett. 57 (1986) 249
2. Higashi G.S., Chabal Y.J., Trucks G.W., and Raghavachari K. Appl. Phys. Lett. 56 (1990) 656
3. Grey F., and Hermansson K. Appl. Phys. Lett. 71 (1997) 3400
4. Eng K., McFarland R.N., and Kane B.E. Appl. Phys. Lett. 87 (2005) 052106
5. Ando T., Fowler A.B., and Stern F. Rev. Mod. Phys. 54 (1982) 437
6. Khrapai V.S., Shashkin A.A., and Dolgopolov V.T. Phys. Rev. B 67 (2003) 113305
7. Arovas D.P., Karlhede A., and Lilliehook D. Phys. Rev. B 59 (1999) 13147