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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1888-1891

Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells

(9) Arnaudov, B a Paskov, P P b Haratizadeh, H b Holtz, P O b Monemar, B b Kamiyama, S c Iwaya, M c Amano, H c Akasaki, I c

a UNIVERSITY OF SOFIA (Bulgaria)

b LINKÖPING UNIVERSITY (Sweden)

c MEIJO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HOLE LOCALIZATION POTENTIAL; DOPING DENSITY; EMISSION LINESHAPE; NONEQUILIBRIUM HOLES; 78.55.CR; 78.67.DE; BAND GAP RENORMALIZATION; BURSTEIN-MOSS EFFECTS; GAN/ALGAN MULTIPLE QUANTUM WELLS; OPTICAL EMISSION SPECTRA; RADIATIVE RECOMBINATION; RECOMBINATION MECHANISMS;

ELECTRON TRANSITIONS; ENERGY GAP; GALLIUM NITRIDE; LIGHT EMISSION; SEMICONDUCTOR DOPING; SILICON; EMISSION SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33746369138 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565267 Document Type: Conference Paper

Times cited : (4)

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