Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1687-1690

  Lozano, J G ^a   Gonzalez, D ^a   Sanchez A M ^a   Araujo, D ^a   Ruffenach, S ^b   Briot, O ^b   Garcia R ^a  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GAN CAPPING LAYER; PATTERN MEASUREMENTS; PLANAR VIEW GEOMETRY; PLASTIC RELAXATION; 68.37.LP; 68.55.AC; 81.05.EA; 81.07.TA; 81.15.KH;

ASPECT RATIO; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SAPPHIRE; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33746346171     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565186     Document Type: Conference Paper

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