Photoluminescence and edge-incident wavelength modulation transmittance spectroscopy characterizations of InGaN/GaN multiple-quantum-well structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1983-1987

  Lin, D Y ^a   Chen, W L ^a   Lin, W C ^a   Shiu, J J ^a   Han, J ^b  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONIC TRANSITION ENERGIES; INCIDENT WAVELENGTH MODULATION TRANSMITTANCE SPECTROSCOPY (WMTS); MULTIPLE-QUANTUM-WELL (MQW) STRUCTURES; MULTIREFLECTION INTERFERENCE; 78.20.CI; 78.55.CR; 78.67.DE; 78.67.PT; MULTIPLE-QUANTUM-WELL STRUCTURES; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM-CONFINED STARK EFFECT; TRANSMITTANCE SPECTROSCOPIES;

EPITAXIAL GROWTH; GALLIUM NITRIDE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS; MODULATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33746335652     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565324     Document Type: Conference Paper

References (6)

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