Room temperature ferromagnetism of Co doped TiO2 using ion implantation and defect engineering

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 250, Issue 1-2 SPEC. ISS., 2006, Pages 279-282

  Lee, J K ^a   Jung, H S ^a   Valdez, J A ^a   Hundley, M F ^a   Thompson, J D ^a   Sickafus, K E ^a   Nastasi, M ^a   Hamby, D W ^b   Lucca, D A ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b Oklahoma State University   (United States)

Author keywords

Ferromagnetic semiconductor; Ion implantation; TiO2

Indexed keywords

ANNEALING; COBALT COMPOUNDS; ION BEAMS; ION IMPLANTATION; MAGNETIC SEMICONDUCTORS; MAGNETOMETERS; SINGLE CRYSTALS; SQUIDS; TITANIUM DIOXIDE; X RAY DIFFRACTION;

DEFECT ENGINEERING; FERROMAGNETIC SEMICONDUCTORS; ION BEAM SYNTHESIS; TIO2;

FERROMAGNETISM;

EID: 33746314232     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.04.171     Document Type: Article

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