Fabrication of MFIS diodes using sol-gel derived SBT films and LaAlO 3 buffer layers

Integrated Ferroelectrics

Volumn 40, Issue 1-5, 2001, Pages 201-209

  Park, Byung Eun ^a   Ishiwara, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

LaAlO3; SBT; Sol gel; Vacuum evaporation

Indexed keywords

BUFFER LAYERS; FILM GROWTH; SOL-GEL PROCESS; STRONTIUM COMPOUNDS; VACUUM EVAPORATION;

CAPACITANCE-VOLTAGE (C-V) MEASUREMENT; LANTHANUM ALUMINATE (LAALO3);

THIN FILMS;

EID: 0037644116     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580108010843     Document Type: Article

References (11)

1. D. H. Looney, U.S. Patent 2791758 (1957)
2. S. Geller and V. B. Bala, Acta. Cryst., 9, 1019 (1956).
3. G. Malandrino and I. L. Fragala, Chem. Mater., 10, 3765 (1998).
4. C. H. Kim, J. W. Jang, S. Y. Cho, I. T. Kim and K. S. Hong, Physica B., 262, 438 (1999).
5. J. Chroschand E. H. Salje, J. Appl. Phys., 85, 722 (1999).
6. A. A Molodyk, I. E. Korsakov, M. A. Novojilov, I. E. Graboy, A. R. Kaul and G. Wahl, Chem. Vap. Deposition., 6, 133 (2000)
7. L. P. Lee, K. Char, M. S. Colclough and G. Zaharchuk, Appl. Phys. Lett., 59, 3051 (1991).
8. A. E. Lee, C. E. Platt, J. F. Burch, R. W. Simon, J. P. Goral and M. M. Al-Jassim, Appl. Phys. Lett., 57, 2019 (1990).
9. P. Peshev and V. Slavova, Mater. Res. Bull., 29, 255 (1994).
10. J. H. Takemoto, C. M. Jackson, R. Hu, J. F. Burch, K. P. Daly and R. W. Simon, IEEE Trans. Magne., 27, 2549 (1991).
11. E. A. Giess, R. L. Sandstrom, W. J. Gallagher, A. Gupta, S. L. Shinde, R. F. Cook, E. I. Cooper, E. J. M. O'Sullivan, J. M. Roldan, A. P. Segmller and J. Angilello, IBM J. Res. Develop., 34, 916 (1990).