Properties of ferroelectric Pb(Zr,Ti)O3-SiO2-B 2O3 glass-ceramic thin films derived by sol-gel method

Ferroelectrics

Volumn 271, Issue , 2002, Pages 3-8

  Wang, Xusheng ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

B2O3; Glass ceramic thin film; PZT; SiO2; Sol gel

Indexed keywords

FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GLASS CERAMICS; PERMITTIVITY; PEROVSKITE; SOL-GELS;

B2O3; GLASS CERAMIC THIN FILMS; GLASS CONCENTRATION; PZT;

THIN FILMS;

EID: 33746282778     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/713716208     Document Type: Conference Paper

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