Structural and electrical properties of ferroelectric Pb(Zr1-xTix)O3-SiO2 glass-ceramic thin films derived by the sol-gel method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1401-1407

  Wang, X ^a   Ishiwara, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Crystallization; Electric property; Glass ceramic thin film; PZT; Sol gel

Indexed keywords

DIELECTRIC LOSSES; ELECTRIC PROPERTIES; FILM GROWTH; GLASS CERAMICS; HYSTERESIS; PERMITTIVITY; POLARIZATION; RAPID THERMAL ANNEALING; SEMICONDUCTING LEAD COMPOUNDS; SILICA; SOL-GELS; SUBSTRATES;

FERROELECTRIC GLASS-CERAMIC THIN FILMS;

FERROELECTRIC THIN FILMS;

EID: 0035269934     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1401     Document Type: Article

References (13)