Sol-gel derived ferroelectric Pb(Zr1-xTix)O3-SiO2 -B2O3 glass-ceramic thin films formed at relatively low annealing temperatures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 B, 2001, Pages 5547-5550

  Wang, X ^a   Ishiwara, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

B2O3; Ferroelectric; Glass ceramic thin film; PZT; SiO2; Sol gel

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLIZATION; CURRENT DENSITY; FILM PREPARATION; GLASS CERAMICS; LEAD COMPOUNDS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; PERMITTIVITY; POLARIZATION; RAPID THERMAL ANNEALING; SOL-GELS;

LEAD ZIRCONATE TITANATE (PZT);

FERROELECTRIC THIN FILMS;

EID: 0035455330     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5547     Document Type: Article

References (9)