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Volumn 67, Issue 8, 2006, Pages 1636-1642

Temperature dependent transport properties of CuInSe2-ZnO heterostructure solar Cell

Author keywords

A. Semiconductors B. Vapor deposition C. X ray diffraction D. Electrical properties

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; HETEROJUNCTIONS; SOLAR CELLS; THERMAL EFFECTS; VAPOR DEPOSITION; X RAY DIFFRACTION;

EID: 33746217850     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2006.02.012     Document Type: Article
Times cited : (4)

References (26)
  • 17
    • 33746180942 scopus 로고    scopus 로고
    • S.M. Sze, Physics of Semiconductor Devices, second ed., New York, 1981.
  • 20
    • 33746194403 scopus 로고    scopus 로고
    • J. Beier, B. Voss, IEEE Photovoltaic Specialist Conference, 1993, p. 321.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.