Effects of strain on the growth and properties of CuInSe2 epitaxial films

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1051-1056

  Niki, S ^a   Fons, P J ^a   Shibata, H ^a   Kurafuji, T ^a   Yamada, A ^a   Okada, Y ^a   Oyanagi, H ^a   Bi, W G ^b   Tu, C W ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

CuInSe2; Molecualr beam epitaxy; Photoluminescence; Transmission electron microscopy; X ray diffraction

Indexed keywords

COPPER COMPOUNDS; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN RATE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

COPPER INDIUM SELENIDE;

SEMICONDUCTING FILMS;

EID: 0031146255     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01213-4     Document Type: Article

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