Optical characterization of gallium antimonide highly doped with manganese

Journal of Physics and Chemistry of Solids

Volumn 67, Issue 8, 2006, Pages 1724-1730

  Kucera M ^a   Novak J ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

A. Semiconductors; B. Epitaxial growth; D. Electronic structure; D. Luminescence

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; MANGANESE; PHOTOLUMINESCENCE; SINGLE CRYSTALS;

ABSORPTION BAND; GALLIUM ANTIMONIDE; IONIZATION ENERGY; VALENCE-BAND;

GALLIUM COMPOUNDS;

EID: 33746217837     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2006.03.011     Document Type: Article

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