Blockade of free carriers by hopping carriers leading to the low-frequency current oscillations in semi-insulating GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 3, 2006, Pages

  De Oliveira, A G ^a   Ribeiro, G M ^a   Albuquerque, H A ^a,c   Moreira, M V B ^a   Rodrigues, W N ^a   Gonzalez J C ^a   Rubinger, R M ^b  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b FEDERAL UNIVERSITY OF ITAJUBÁ   (Brazil)

^c SANTA CATARINA STATE UNIVERSITY   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33746216405     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.035204     Document Type: Article

References (32)

1. B. K. Ridley and T. B. Watkins, Proc. Phys. Soc. London PPSOAU 0370-1328 78, 293 (1961).
2. A. Neumann, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1377023 90, 1 (2001).
3. J. B. Gunn, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(63) 90041-3 1, 88 (1963).
4. F. W. Smith, A. R. Calawa, C. L. Chen, M. J. Manfra, and L. J. Mahoney, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.2046 9, 77 (1988).
5. D. C. Look, Thin Solid Films THSFAP 0040-6090 10.1016/0040-6090(93)90703- R 231, 61 (1993).
6. K. Krambrock, M. Linde, J. M. Spaeth, D. C. Look, D. Bliss, and W. Walukiewicz, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/7/8/002 7, 1037 (1992).
7. K. M. Man, M. Kaminska, and Z. Liliental-Weber, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.351538 72, 2850 (1992).
8. I. Tkach, K. Krambrock, C. Steen, P. Kiesel, and J. M. Spaeth, Physica B PHYBE3 0921-4526 308-310, 749 (2001).
9. G. M. Martin, A. Mitonneau, and A. Mircea, Electron. Lett. ELLEAK 0013-5194 13, 191 (1977).
10. J. Gebauer, R. Krause-Rehberg, S. Eichler, M. Luysberg, H. Sohn, and E. R. Weber, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.119814 71, 638 (1997).
11. J. Gebauer, F. Börner, and R. Krause-Rehberg, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.373549 87, 8368 (2000).
12. C. H. Henry and D. V. Lang, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.15.989 15, 989 (1977).
13. J. S. Blakemore and S. Rahimi, Semiconductors and Semimetals (Academic, New York, 1984), Vol. 20, p. 234.
14. B. K. Ridley and R. G. Pratt, J. Phys. Chem. Solids JPCSAW 0022-3697 10.1016/0022-3697(65)90068-5 26, 21 (1965).
15. M. Kaminska, J. M. Parsey, J. Lagowski, and H. C. Gatos, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.93366 41, 989 (1982).
16. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
17. D. C. Northrop, P. R. Thornton, and K. E. Trezise, Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(64)90118-2 7, 17 (1964).
18. G. N. Maracas, W. Porod, D. A. Johnson, and D. K. Ferry, Physica B & C PHBCDQ 0378-4363 10.1016/0378-4363(85)90355-9 134, 276 (1985).
19. A. Brandl, T. Geisel, and W. Prettl, Europhys. Lett. EULEEJ 0295-5075 3, 401 (1987).
20. R. L. da Silva, H. A. Albuquerque, R. M. Rubinger, A. G. de Oliveira, G. M. Ribeiro, and W. N. Rodrigues, Physica D PDNPDT 0167-2789 10.1016/j.physd. 2004.03.001 194, 166 (2004).
21. D. C. Look, Z.-Q. Fang, and J. W. Look, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2054804 141, 747 (1994).
22. D. A. Johnson, R. A. Puechner, and G. N. Maracas, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.345252 67, 300 (1990).
23. K. Seeger, Semiconductor Physics (Springer, New York, 1973).
24. J. L. Hartke, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1655871 39, 4871 (1968).
25. M. Lax, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.119.1502 119, 1502 (1960).
26. Y. V. Vorobev, E. I. Tolpygo, and M. K. Sheinkman, Phys. Status Solidi B PSSBBD 0370-1972 123, 295 (1984).
27. H. A. Albuquerque, A. G. de Oliveira, G. M. Ribeiro, R. L. da Silva, W. N. Rodrigues, and R. M. Rubinger, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1650530 95, 3553 (2004).
28. D. C. Look, D. C. Walters, M. O. Manasreh, J. R. Sizelove, C. E. Stutz, and K. R. Evans, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.42.3578 42, 3578 (1990).
29. H. A. Albuquerque, A. G. de Oliveira, G. M. Ribeiro, R. L. da Silva, W. N. Rodrigues, M. V. B. Moreira, and R. M. Rubinger, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1534892 93, 1647 (2003).
30. B. K. Ridley, Proc. Phys. Soc. London PPSOAU 0370-1328 10.1088/0370-1328/82/6/315 82, 954 (1963).
31. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors, Springer Series in Solid-State Sciences, Vol. 45 (Springer-Verlag, Berlin, 1984).
32. M. I. N. da Silva, J. C. Gonzalez, A. G. de Oliveira, G. M. Ribeiro, and M. V. B. Moreira, in Proceedings of the II International Workshop on Optoelectronic Materials and their Applications (including Solar Cells), 1998, edited by, F. Leccabue,,, M. Sánchez,, and, A. Escobosa, (Edizioni ETS, Havana, Cuba, 1998), p. 151.