Efficient 3D 'atomistic' simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs

Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998

Volumn 1998-October, Issue , 1998, Pages 263-266

  Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

IONIC CONDUCTION; MOSFET DEVICES; POISSON EQUATION;

CURRENT CONTINUITY; IMPURITY LEVEL; MOSFETS; RANDOM DOPANTS; RANDOM IMPURITIES; SIMULATION TECHNIQUE;

THRESHOLD VOLTAGE;

EID: 33746162765     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.1998.742761     Document Type: Conference Paper

References (8)

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