Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching

Applied Physics Letters

Volumn 89, Issue 2, 2006, Pages

  Jeon, D Y ^a   Kim, K H ^a   Park, S J ^a   Huh, J H ^a   Kim, H Y ^a   Yim, C Y ^a   Kim, G T ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRODES; GALLIUM NITRIDE; REACTIVE ION ETCHING;

CONTACT BARRIERS; METAL ELECTRODES; NANOWIRES; NATIVE OXIDE LAYER;

NANOSTRUCTURED MATERIALS;

EID: 33746094287     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2220538     Document Type: Article

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