Temperature dependence of absorption edge anisotropy in 2H- MoSe2 layered semiconductors

Solid State Communications

Volumn 139, Issue 4, 2006, Pages 176-180

  Hu, S Y ^a   Lee, Y C ^a   Shen, J L ^b   Chen, K W ^b   Tiong, K K ^c   Huang, Y S ^d  

^a TUNG NAN INSTITUTE OF TECHNOLOGY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

A. Semiconductors; D. Photoconductivity

Indexed keywords

ANISOTROPY; MOLYBDENUM COMPOUNDS; PHONONS; PHOTOCONDUCTIVITY; THERMAL EFFECTS; VAN DER WAALS FORCES;

ABSORPTION EDGE ANISOTROPY; BOSE-EINSTEIN EMPIRICAL EXPRESSION; URBACH ENERGY; VAN DER WAALS (VDW) PLANE;

SEMICONDUCTOR MATERIALS;

EID: 33745952754     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.05.027     Document Type: Article

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