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Volumn 4, Issue , 2005, Pages 2630-2634

Power losses and thermal modeling of a 4H-SiC VJFET inverter

Author keywords

Inverter; Power loss modeling; Schottky diode; Silicon Carbide (SiC); Thermal modeling; VJFET

Indexed keywords

PARAMETER EXTRACTION; POWER LOSS MODELING; SCHOTTKY DIODE; THERMAL MODELING; VJFET;

EID: 33745945870     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2005.1518831     Document Type: Conference Paper
Times cited : (15)

References (7)
  • 1
    • 0035395786 scopus 로고    scopus 로고
    • Electron mobolity models for 4H, 6H, and 3C SiC
    • July
    • M. Roschke, "Electron mobolity models for 4H, 6H, and 3C SiC," IEEE Transactions on Electron Devices, vol. 48, no.7, July 2001, pp. 1442-1447.
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.7 , pp. 1442-1447
    • Roschke, M.1
  • 3
    • 0035695031 scopus 로고    scopus 로고
    • Effects of silicon carbide (SiC) power devices on HEV PWM Inverter Losses
    • Nov 29 - Dec 2, Denver, Colorado
    • L. M. Tolbert, B. Ozpineci, S. Islam, M. Hasanuzzaman, "Effects of silicon carbide (SiC) power devices on HEV PWM Inverter Losses," IEEE Industrial Electronics Conference, Nov 29 - Dec 2, 2001, Denver, Colorado, pp. 1061-1066.
    • (2001) IEEE Industrial Electronics Conference , pp. 1061-1066
    • Tolbert, L.M.1    Ozpineci, B.2    Islam, S.3    Hasanuzzaman, M.4
  • 4
    • 0034140439 scopus 로고    scopus 로고
    • Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor
    • A. Q. Huang, B. Zhang, "Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor," Solid-State Electronics, vol. 44, 2000, pp. 325-340.
    • (2000) Solid-state Electronics , vol.44 , pp. 325-340
    • Huang, A.Q.1    Zhang, B.2
  • 5
    • 0033326318 scopus 로고    scopus 로고
    • On line thermal model and thermal management strategy of a three phase voltage source inverter
    • October 3-7, Phoenix, Arizona
    • V. Blasko, R. Lukaszewski, R. Sladky, "On line thermal model and thermal management strategy of a three phase voltage source inverter," IEEE Industry Application Societ Annual Meeting, October 3-7, 1999, Phoenix, Arizona, pp. 1423-1431.
    • (1999) IEEE Industry Application Societ Annual Meeting , pp. 1423-1431
    • Blasko, V.1    Lukaszewski, R.2    Sladky, R.3
  • 7
    • 33744984141 scopus 로고    scopus 로고
    • High temperature and high frequency performance evaluation of 4H-SiC unipolar devices
    • March 6-10, Austin, Texas
    • M. Chinthavali, B. Ozpineci, L. M. Tolbert, "High Temperature and High Frequency Performance Evaluation of 4H-SiC Unipolar Devices," IEEE Applied Power Electronics Conference, March 6-10, 2005, Austin, Texas, pp. 322-328.
    • (2005) IEEE Applied Power Electronics Conference , pp. 322-328
    • Chinthavali, M.1    Ozpineci, B.2    Tolbert, L.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.