Effects of silicon carbide (SiC) power devices on HEV PWM inverter losses

IECON Proceedings (Industrial Electronics Conference)

Volumn 2, Issue , 2001, Pages 1061-1066

  Ozpineci, Burak ^a   Tolbert, Leon M ^a   Islam, Syed K ^a   Hasanuzzaman, Md ^a  

^a UNIVERSITY OF TENNESSEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DRIVES; ELECTRIC NETWORK TOPOLOGY; ELECTRIC RESISTANCE; ELECTRIC VEHICLES; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

HYBRID ELECTRIC PULSE WIDTH MODULATION INVERTER LOSSES; HYBRID ELECTRIC VEHICLE; SILICON CARBIDE POWER DEVICE; THREE-PHASE PULSE WIDTH MODULATION INVERTER;

ELECTRIC INVERTERS;

EID: 0035695031     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Optimum semiconductors for high-power electronics
2. Silicon carbide merged PiN schottky diode switching characteristics and evaluation for power supply applications
3. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
4. A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications
5. Semiconductor power losses in ac inverters
6. DS(on) of the power MOSFET's on the instantaneous value of the drain current into the calculation of the conduction losses of high-frequency three-phase PWM inverters
7. Comparing SiC switching power devices: MOSFET, NPN transistor and GTO transistor