Calculations of light trapping, responsivity, and internal quantum efficiency of In-doped silicon (n) structure

Renewable Energy

Volumn 28, Issue 2, 2003, Pages 311-320

  Mohamad, Wagah F ^a  

^a UNIVERSITY OF MOSUL   (Iraq)

Author keywords

In doped silicon; Silicon solar cells

Indexed keywords

MATHEMATICAL MODELS; PHOTOVOLTAIC EFFECTS; SILICON; SOLAR CELLS;

LIGHT TRAPPING;

RENEWABLE ENERGY RESOURCES;

LIGHT; SILICON;

EID: 0036462621     PISSN: 09601481     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0960-1481(01)00182-3     Document Type: Article

References (12)

1. Limitations and possibilities for improvement of photovoltiac solar energy converters
2. Efficiency improvements of silicon solar cell by impurity photovoltiac effect
3. Light trapping properties pyramidally textured surfaces
4. Absorption edge of silicon from solar cell spectral response measurements
5. Photoelectrical properties of silicon germanium thin films
6. Measurements of concentration and photoionization cross section of indium in silicon
7. Infrared response and quantum efficiency of In-doped silicon(n) structure
8. Growth and characterization of In-doped silicon for extrinsic infrared IR detectors
9. Screening of optical dopants in silicon solar cells for improved infrared response