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Volumn 5753, Issue I, 2005, Pages 491-501
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32nm node technology development Using interference immersion lithography
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Author keywords
193nm Immersion Lithography; 32nm node; 38nm node; ArF Immersion Lithography; High n Immersion Fluids
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Indexed keywords
COST EFFECTIVENESS;
FLUID STRUCTURE INTERACTION;
IMAGING TECHNIQUES;
LIGHT POLARIZATION;
LIGHTING;
REFRACTIVE INDEX;
SEMICONDUCTOR MATERIALS;
SURFACE ROUGHNESS;
WATER;
193NM IMMERSION LITHOGRAPHY;
32NM NODES;
38NM NODES;
ARF IMMERSION LITHOGRAPHY;
HIGH-N IMMERSION FLUIDS;
PHOTOLITHOGRAPHY;
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EID: 24644437492
PISSN: 16057422
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.601012 Document Type: Conference Paper |
Times cited : (14)
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References (8)
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