A novel tri-control gate surrounding gate transistor (TCG-SGT) nonvolatile memory cell for flash memory

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 924-928

  Ohba, Takuya ^a   Nakamura, Hiroki ^a   Sakuraba, Hiroshi ^b   Masuoka, Fujio ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SENDAI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Coupling ratio; Flash memory; Surrounding gate transistor

Indexed keywords

CAPACITANCE; FLASH MEMORY; NONVOLATILE STORAGE; SILICON; SOLID STATE DEVICE STRUCTURES;

COUPLING RATIO; NONVOLATILE MEMORY CELLS; SILICON PILLAR; SURROUNDING GATE TRANSISTOR;

GATES (TRANSISTOR);

EID: 33745757940     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.023     Document Type: Article

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