Effect of indium-nitrogen bonding on the localized vibrational mode in Iny Ga1-y Nx As1-x

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 24, 2006, Pages

  Teweldeberhan, A M ^a   Fahy, S ^a,b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33745646048     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.245215     Document Type: Article

References (27)

1. M. Weyers, M. Sato, and H. Ando, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 10.1143/JJAP.31.L853 31, L853 (1992).
2. H. Riechert, A. Ramakrishnan, and G. Steinle, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/17/8/318 17, 892 (2002).
3. J. F. Geisz and D. J. Friedman, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/17/8/305 17, 769 (2002).
4. S. Kurtz, J. Webb, L. Gedvilas, D. Friedman, J. Geisz, J. Olson, R. King, D. Joslin, and N. Karam, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1345819 78, 748 (2001).
5. J. Wagner, T. Geppert, K. Köhler, P. Ganser, and N. Herres, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1412277 90, 5027 (2001).
6. V. Lordi, V. Gambin, S. Friedrich, T. Funk, T. Takizawa, K. Uno, and J. S. Harris, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.90.145505 90, 145505 (2003).
7. H. Ch. Alt and Y. V. Gomeniuk, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.70.161314 70, 161314 (R) (2004).
8. O. Rubel, K. Volz, T. Torunski, S. D. Baranovskii, F. Grosse, and W. Stolz, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1829801 85, 5908 (2004).
9. E.-M. Pavelescu, J. Wagner, H.-P. Komsa, T. T. Rantala, M. Dumitrescu, and M. Pessa, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2112173 98, 083524 (2005).
10. V. Lordi, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and S. Friedrich, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.125309 71, 125309 (2005).
11. K. Kim and A. Zunger, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.86.2609 86, 2609 (2001).
12. M. D. McCluskey, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.372453 87, 3593 (2000).
13. R. C. Newman, Adv. Phys. ADPHAH 0001-8732 10.1080/00018736900101367 18, 545 (1969).
14. M. Stavola, in Semiconductors and Semimetals, edited by, M. Stavola, (Academic Press, New York, 1999), Vol. 51B, Chap..
15. T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.121959 73, 1409 (1998).
16. H. Ch. Alt, A. Yu. Egorov, H. Riechert, B. Wiedemann, J. D. Meyer, R. W. Michelmann, and K. Bethge, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1328096 77, 3331 (2000).
17. A. Mascarenhas and M. J. Seong, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/17/8/311 17, 823 (2002).
18. M. Güngerich, P. J. Klar, W. Heimbrodt, J. Koch, W. Stolz, M. P. Halsall, and P. Harmer, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.075201 71, 075201 (2005).
19. A. M. Teweldeberhan and S. Fahy, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.72.195203 72, 195203 (2005).
20. S. B. Zhang and S.-H. Wei, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.86.1789 86, 1789 (2001).
21. R. P. Feynman, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.56.340 56, 340 (1939).
22. G. Kresse and J. Hafner, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.47.558 47, 558 (1993).
23. G. Kresse and J. Furthmüller, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.11169 54, 11169 (1996).
24. J. P. Perdew and A. Zunger, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.23.5048 23, 5048 (1981).
25. D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.41.7892 41, 7892 (1990).
26. G. Kresse and J. Hafner, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/6/40/015 6, 8245 (1994).
27. H. J. Monkhorst and J. D. Pack, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.13.5188 13, 5188 (1976).