Investigation about the strain distribution of GaN/AlN wurtzite crystal structure material self-organized truncated pyramid shaped quantum dots

Guangdianzi Jiguang/Journal of Optoelectronics Laser

Volumn 17, Issue 4, 2006, Pages 381-385

  Liu, Yu Min ^a   Yu, Zhong Yuan ^a   Yang, Hong Bo ^a   Huang, Yong Zhen ^b  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Quantum dot; Self organization; Strain

Indexed keywords

ALIGNMENT; CRYSTAL STRUCTURE; FINITE ELEMENT METHOD; GALLIUM NITRIDE; GREEN'S FUNCTION; RELIABILITY; STRAIN; STRUCTURE (COMPOSITION); THERMAL EXPANSION; THREE DIMENSIONAL;

ALUMINIUM NITRIDE; ELASTIC CONSTANTS; INTER LAYERED QUANTUM DOTS; LATTICE MISMATCH; PHYSICAL MODEL; SELF ORGANIZATION; STRAIN FIELD DISTRIBUTION; THREE DIMENSION ANISOTROPIC PSEUDO THERMAL EXPANSION; VERTICAL ALIGNMENT; WURTZITE STRUCTURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745642473     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. WANG Zhan-guo. Controllable growth of semiconductor nanometer structures[J]. Journal of Synthetic Crystals, 2002, 31(3): 208-217.(in Chinese).
2. ZHAO Cui-lan, XIAO Jing-lin. Properties of Weak-coupling polaron in cylindrical quantum dot[J]. Journal of Optoelectronics·Laser, 2004, 15(5): 126-128.(in Chinese)
3. CHANG Jia-feng, ZENG Xian-hua, ZHOU Peng-xia, et al. Calculation of ground-state energies of hydrogen-like impurity in a lens-shaped quantum dot[J]. Acta Physica Sinica, 2004, 53(4): 978-983.(in Chinese).
4. Maxim A Makeev, Anupam Madhukar. Simulations of atomic level stresses in systems of buried Ge/Si islands[J]. Phys Review Lett, 2001, 86(24): 5542-5545.
5. YU Wen-bin, Madhukar Anupam. Molecular dynamics study of coherent energetics, stresses, and strains in highly strained epitaxy[J]. Phys Review Lett, 1997, 79(5): 905-908.
6. Raiteri P, Leo Miglio. Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate[J]. Applied Phys Lett, 2002, 80(2): 3736-3739.
7. Andreev A D, Reilly E P O. Theory of the electronic structures of GaN/AlN hexagonal quantum dots[J]. Phys Review B, 2000, 62(23): 15851-16870.
8. LIU Yu-min, YU Zhong-yuan, YANG Hong-bo, et al. Investigation of the elastic strain field distribution of self-organized growth lensed-shaped quantum dot by finite element method[J]. Chinese Journal of Semiconductor, 2005, 26(7): 1317-1322.
9. Seungwon LEE, Olga L Lazarenkova, et al. Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots[J]. Phys Review B, 2004, 70(12): 1253071-1253077.