-
1
-
-
1542786407
-
Surface passivation of light-emitting porous silicon by nitride
-
Chinese source
-
LI Gu-bo, ZHANG Fu-long, CHEN Hua-jie, et al. Surface passivation of light-emitting porous silicon by nitride[J]. Acta Physica Sinica, 1996, 45: 1232-1238.(in Chinese).
-
(1996)
Acta Physica Sinica
, vol.45
, pp. 1232-1238
-
-
Li, G.-B.1
Zhang, F.-L.2
Chen, H.-J.3
-
2
-
-
0000420353
-
Strong- and nondegrading-luminescent porous silicon prepared by hydrothermal etching
-
LI Xin-jian, ZHU De-liang, CHEN Qian-wang, et al. Strong- and nondegrading-luminescent porous silicon prepared by hydrothermal etching[J]. Appl Phys Lett, 1999, 74: 389-391.
-
(1999)
Appl Phys Lett
, vol.74
, pp. 389-391
-
-
Li, X.-J.1
Zhu, D.-L.2
Chen, Q.-W.3
-
3
-
-
0142026489
-
Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds
-
Gelloz B, Sano H, Boukherroub R, et al. Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds[J]. Appl Phys Lett, 2003, 83: 2342-2345.
-
(2003)
Appl Phys Lett
, vol.83
, pp. 2342-2345
-
-
Gelloz, B.1
Sano, H.2
Boukherroub, R.3
-
4
-
-
3142677423
-
Influences of preparation and passivated conditions on the luminescence properties of porous silicon
-
Chinese source
-
LI Hong-jian, ZHAO Chu-jun, XIE Zi-fang, et al. Influences of preparation and passivated conditions on the luminescence properties of porous silicon[J]. Journal of Optoelectronics·Laser, 2003, 14(1): 54-57.(in Chinese)
-
(2003)
Journal of Optoelectronics·Laser
, vol.14
, Issue.1
, pp. 54-57
-
-
Li, H.-J.1
Zhao, C.-J.2
Xie, Z.-F.3
-
5
-
-
8644230936
-
Effect on photoluminescence intensity of porous silicon processing by a wet oxidized technology
-
Chinese source
-
CAI Bei-ni, CHEN Song-yan, ZENG Ming-gang, et al. Effect on photoluminescence intensity of porous silicon processing by a wet oxidized technology[J]. Journal of Optoelectronics·Laser, 2004, 15(8): 951-954.(in Chinese).
-
(2004)
Journal of Optoelectronics·Laser
, vol.15
, Issue.8
, pp. 951-954
-
-
Cai, B.-N.1
Chen, S.-Y.2
Zeng, M.-G.3
-
6
-
-
0037123544
-
Molecular interaction of ozone with silicon nanocrystallites: A new method to excite visible luminescence
-
Kuznetsov S N, Saren A A, Pikulev V B, et al. Molecular interaction of ozone with silicon nanocrystallites: a new method to excite visible luminescence[J]. Applied Surface Science, 2002, 191: 247-253.
-
(2002)
Applied Surface Science
, vol.191
, pp. 247-253
-
-
Kuznetsov, S.N.1
Saren, A.A.2
Pikulev, V.B.3
-
7
-
-
33847571146
-
x films produced by plasma enhanced chemical vapour deposition
-
x films produced by plasma enhanced chemical vapour deposition[J]. J Vac Sci Technol, 1986, A4(3): 689-694.
-
(1986)
J Vac Sci Technol
, vol.A4
, Issue.3
, pp. 689-694
-
-
Pai, P.G.1
Chao, S.S.2
Takagi, Y.3
-
8
-
-
0037212086
-
Characterizations and luminescence properties of annealed porous silicon films
-
CHEN Song-yan, Kashkarov P K, Timoshenko V Y, et al. Characterizations and luminescence properties of annealed porous silicon films[J]. Journal of Crystal Growth, 2003, 247: 445-451.
-
(2003)
Journal of Crystal Growth
, vol.247
, pp. 445-451
-
-
Chen, S.-Y.1
Kashkarov, P.K.2
Timoshenko, V.Y.3
-
9
-
-
0033538307
-
Synthesis of alkyl-terminated silicon nanoclusters by a solution route
-
YANG Chung-sung, Richard A Bley, Susan M Kauzlarich, et al. Synthesis of alkyl-terminated silicon nanoclusters by a solution route[J]. Journal of American Chemistry Society, 1999, 121: 5191-5195.
-
(1999)
Journal of American Chemistry Society
, vol.121
, pp. 5191-5195
-
-
Yang, C.-S.1
Bley, R.A.2
Kauzlarich, S.M.3
-
10
-
-
3142782925
-
Quantum confinement contribution to porous silicon photoluminescence spectra
-
Cooke D W, Muenchausen R E, Bennett B L, et al. Quantum confinement contribution to porous silicon photoluminescence spectra[J]. Journal of Applied Physics, 2004, 96(1): 197-203.
-
(2004)
Journal of Applied Physics
, vol.96
, Issue.1
, pp. 197-203
-
-
Cooke, D.W.1
Muenchausen, R.E.2
Bennett, B.L.3
-
11
-
-
2542487684
-
Structural and optical features of nanoporous silicon prepared by electrochemical anodic etching
-
Kim D A, Im S I, Whang C M, et al. Structural and optical features of nanoporous silicon prepared by electrochemical anodic etching[J]. Applied Surface Science, 2004, 230: 125-130.
-
(2004)
Applied Surface Science
, vol.230
, pp. 125-130
-
-
Kim, D.A.1
Im, S.I.2
Whang, C.M.3
-
12
-
-
0001359747
-
Luminescence degradation in porous silicon
-
Tischier M A, Collins R T, Stathis J H, et al. Luminescence degradation in porous silicon[J]. Appl Phys Lett, 1992, 60(5): 639-641.
-
(1992)
Appl Phys Lett
, vol.60
, Issue.5
, pp. 639-641
-
-
Tischier, M.A.1
Collins, R.T.2
Stathis, J.H.3
-
13
-
-
0035504781
-
Aging behaviour of porous silicon electrochemically etched with the aid of Zn
-
Suh K Y, Kim Y S, Lee H. Aging behaviour of porous silicon electrochemically etched with the aid of Zn[J]. Journal of Applied Physics, 2001, 90(9): 4485-4488.
-
(2001)
Journal of Applied Physics
, vol.90
, Issue.9
, pp. 4485-4488
-
-
Suh, K.Y.1
Kim, Y.S.2
Lee, H.3
|