Low leaching and low LWR photoresist development for 193 nm immersion lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 I, Issue , 2006, Pages

  Ando, Nobuo ^a   Lee, Youngjoon ^a   Miyagawa, Takayuki ^a   Edamatsu, Kunishige ^a   Takemoto, Ichiki ^a   Yamamoto, Satoshi ^a   Tsuchida, Yoshinobu ^a   Yamamoto, Keiko ^a   Konishi, Shinji ^a   Nakano, Katsushi ^b   Tomoharu, Fujiwara ^b  

^a SUMITOMO CHEMICAL CO LTD   (Japan)

^b NIKON CORPORATION   (Japan)

Author keywords

Diffusion; Immersion; Leaching; LWR; PAG; Receding contact angle

Indexed keywords

CATALYSTS; DEFECTS; LEACHING; LITHOGRAPHY; SURFACES;

IMMERSION; LWR; PAG; RECEDING CONTACT ANGLE;

PHOTORESISTS;

EID: 33745632803     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.655586     Document Type: Conference Paper

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