Annealing effect on photoluminescence properties of Er doped Al2O3-SiO2 sol-gel films

Journal of Non-Crystalline Solids

Volumn 352, Issue 26-27, 2006, Pages 2841-2845

  Kwon, Jeong Oh ^a,b   Seok, Sang Il ^a   Jung, Dongwoon ^b  

^a Korea Research Institute of Chemical Technology   (South Korea)

^b Wonkwang University   (South Korea)

Author keywords

Optical properties; Sol gel process

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ERBIUM; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUENCHING; SOL-GELS;

3-GLYCIDOXYPROPYLTRIMETHOXYSILANE; HYDROXYL GROUPS; PHOTOLUMINESCENCE INTENSITY; SOL-GEL PROCESS; SPECIFIC SURFACE AREA;

DIELECTRIC FILMS;

EID: 33745628750     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.02.086     Document Type: Article

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