Defect reduction by using a new rinse solution for 193-nm conventional and immersion lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 II, Issue , 2006, Pages

  Miyahara, Osamu ^a   Shimoaoki, Takeshi ^a   Naito, Ryoichiro ^a   Yoshihara, Kousuke ^a   Kitano, Junichi ^a  

^a TOKYO ELECTRON LTD   (Japan)

Author keywords

193 nm; Defect; Immersion

Indexed keywords

DEFECTS; IONIZATION; PHOTOLITHOGRAPHY; PHOTORESISTS; PROCESS CONTROL;

193 NM; CHEMICALLY AMPLIFIED (CA) RESISTS; DE-IONIZED WATER (DIW); IMMERSION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33745610754     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656361     Document Type: Conference Paper

References (4)

1. The International Technology Roadmap for Semiconductors (2005)
2. Osamu Miyahara, et. al., Proc. SPIE Vol. 5376, 830 (2004)
3. Takeshi Shimoaoki, et. al., Proc. SPIE Vol. 5376, 1223 (2004)
4. Yuko Ono, et. al., Proc. SPIE Vol. 4689, 911 (2002)