Study of ADI(After Develop Inspection) using electron beam

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6152 II, Issue , 2006, Pages

  Saito, Misako ^a   Hayashi, Teruyuki ^a   Fujihara, Kaoru ^a   Saito, Kazuha ^a   Lin, Joseph ^b   Midorikawa, Ryotaro ^a  

^a TOKYO ELECTRON LTD   (Japan)

^b Hermes Microvision Inc   (Taiwan)

Author keywords

Electron beam; Inspection; Photo resist

Indexed keywords

ELECTRIC RESISTANCE MEASUREMENT; ELECTRIC WIRING; ELECTRON BEAMS; INSPECTION; PHOTORESISTORS;

DEFECT DETECTION; ELECTRIC DEFECTS; NUISANCE GENERATION; WIRING RESISTANCE MEASUREMENT;

DEFECTS;

EID: 33745604242     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656090     Document Type: Conference Paper

References (3)

1. Jack Jau, et al, "A Novel Method for In-line process Monitoring by Measuring Gray Level Values of SEM images", Proceedings of ISSM, September 2005,pp143-146.
2. X. Liu, et al, "Low energy large scan field electron beam column for wafer inspection", Journal of Vacuum Science& Technology B, Volume 22, Number 6, pp. 3534-3538.
3. Samantha L.Doan, "Expanding the Role of E-beam Inspection in Sub- 130nm Flash Memory Development", Proceeding of ISSM, September 2004,pp464- 467.