The EUV Resist Test Center at SEMATECH-North

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6151 II, Issue , 2006, Pages

  Lowack, Klaus ^a   Rudack, Andy ^a   Dean, Kim ^a   Malloy, Matt ^a   Lercel, Mike ^a  

^a SEMATECH   (United States)

Author keywords

Extreme ultraviolet; Lithography; Resist

Indexed keywords

IMAGING SYSTEMS; LITHOGRAPHY; SENSITIVITY ANALYSIS; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION; WAVEFRONTS;

EXTREME ULTRAVIOLET; NUMERICAL APERTURE (NA); RESISTS; WAVEFRONT QUALITY;

PHOTORESISTS;

EID: 33745592161     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.657683     Document Type: Conference Paper

References (4)

1. P. Naulleau, K. Goldberg, E. Anderson, J. Cain, P. Denham, B. Hoef, K. Jackson, A. Morlens, S. Rekawa, K. Dean, "EUV microexposures at the ALS using the 0.3-NA MET projection optics," Proc. SPIE 5751, 56-63 (2005).
2. Kim Dean, Ken Gonsalves, Muthiah Thiyagarajan, "EUV Resist Outgassing," 4th International EUVL Symposium, San Diego.
3. Patrick Naulleau, Kim Dean, and Klaus Lowack, Matt Malloy, "Direct Comparison of printing results and aerial-image modeling for the extreme-ultraviolet microfield exposure tool at SEMATECH-North, SPIE 2006, ML 6151-98.
4. Patrick Naulleau, Jason P. Cain, Erik Anderson, Kim Dean, Paul Denham, Kenneth A. Goldberg, Brian Hoef, and Keith Jackson, "Characterization of the synchrotron-based 0.3 numerical aperture extreme ultraviolet microexposure tool at the Advanced Light Source", J. Vac. Sci. Technol. B23, p. 2840 (2005)