Investigation of HgCdTe p-n device structures grown by liquid-phase epitaxy

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1192-1196

  Wang, Changzhen ^a   Tobin, Steve ^b   Parodos, Themis ^b   Smith, David J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b BAE SYSTEMS   (United States)

Author keywords

CdTe passivation layer; Focused ion beam (FIB); HgCdTe; Liquid phase epitaxy (LPE); P n junction; Transmission electron microscopy (TEM)

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ION BEAMS; IONS; PASSIVATION; POLYCRYSTALLINE MATERIALS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CDTE PASSIVATION LAYER; FOCUSED ION BEAM (FIB); HGCDTE; LIQUID-PHASE EPITAXY (LPE); P-N JUNCTION;

LIQUID PHASE EPITAXY;

EID: 33745485864     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0240-8     Document Type: Conference Paper

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