Silicon self-diffusion in heavily B-doped Si using highly pure 30Si epitaxial layer

ECS Transactions

Volumn 2, Issue 2, 2006, Pages 287-297

  Matsumoto, S ^a   Aid, S R ^a   Seto, S ^a   Toyonaga, K ^a   Nakabayashi, Y ^a   Sakuraba, M ^b   Shimamune, Y ^b   Hashiba, Y ^b   Murota, J ^b   Wada, K ^c   Abe, T ^d  

^a KEIO UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DIFFUSION; EPITAXIAL GROWTH; FERMI LEVEL; ISOTOPES; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

EPITAXIAL LAYERS; FERMI LEVEL EFFECTS; LOWER DIFFUSION TEMPERATURES; SILICON SELF-DIFFUSION;

SEMICONDUCTING SILICON;

EID: 33745469343     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2195666     Document Type: Conference Paper

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