Fabrication of nanostructures by selective growth of C60 and Si on Si(1 1 1) substrate

Surface Science

Volumn 600, Issue 13, 2006, Pages 2810-2816

  Nakaya, Masato ^a,b,c   Nakayama, Tomonobu ^a,c,d   Kuwahara, Yuji ^b,c   Aono, Masakazu ^a,c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

C60; Epitaxial growth; Scanning tunneling microscopy; Selective growth; Si; Si(1 1 1) 3 3R30 Ag; Si(1 1 1)7 7

Indexed keywords

EPITAXIAL GROWTH; MULTILAYERS; SCANNING TUNNELING MICROSCOPY; SILICON; SUBSTRATES;

C60; SELECTIVE GROWTH; SI(1 1 1)√3 × √3R30°-AG; SI(1 1 1)7 × 7;

NANOSTRUCTURED MATERIALS;

EID: 33745266086     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.05.009     Document Type: Article

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