Raman analysis of aluminum nitride at high temperature

Materials Characterization

Volumn 57, Issue 2, 2006, Pages 105-110

  Li, Xiaojun ^a   Zhou, Candong ^b   Jiang, Guochang ^c   You, Jinglin ^c  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b BAOSTEEL RESEARCH INSTITUTE   (China)

^c SHANGHAI UNIVERSITY   (China)

Author keywords

Aluminum nitride; Raman spectra; Wurtzite structure

Indexed keywords

COMPRESSIVE STRESS; DECOMPOSITION; HIGH TEMPERATURE EFFECTS; NATURAL FREQUENCIES; PHONONS; RAMAN SCATTERING;

ELEVATED TEMPERATURES; RAMAN PEAKS; ROOM TEMPERATURE; WURTZITE STRUCTURES;

ALUMINUM NITRIDE;

EID: 33745256739     PISSN: 10445803     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchar.2005.12.012     Document Type: Article

References (16)

1. Loudon. The Raman effect in crystals. Adv J Phys 13 (1964) 423-482
2. Strite S., and Morkoc H. J Vac Sci Technol B 10 (1992) 1237
3. Tinkham M. Group theory and quantum mechanics (1964), McGraw Hill, New York
4. Zhang G.-Y., Lang G.-X., and Wang Y.-F. Lattice vibration spectroscopy (1992), Higher Education Press, Beijing 236-242
5. Carlone C., Lakin K.M., and Shanks H.R. Optical phonons of aluminum nitride. J Appl Phys 55 (1984) 4010-4014
6. Liu M.S., Nugent K.W., Prawer S., Bursill L.A., Peng J.L., Tong Y.Z., et al. Micro-Raman scattering properties of highly oriented AlN films. Int J Mod Phys B 12 (1998) 1963-1974
7. Bergman L., Dutta M., Davis C.R.F., Christman J.A., Alexson D., and Nemanich R.J. Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN. J Appl Phys 85 (1999) 3535-3539
8. Brafman O., Lengyel G., Mitra S.S., Gielisse P.J., Plendl J.N., and Mansur L.C. Raman spectra of AlN, cubic BN and BP. Solid State Commun 6 (1968) 523-526
9. Huabin W., Jiecai H., Yongtin Z., and Shanyi D. Effect of additive on self-propagating high-temperature synthesis AlN. J Chin Ceram Soc 28 (2000)
10. McNeil L.E., Grimsditch, and French R.H. Vibrational spectroscopy of aluminum nitride. J Am Ceram Soc 76 (1993) 1132-1136
11. Yuanqiang L., Tai Q., and Wangling Z. Effect of heat treatment on water-resistance of aluminum nitride powder. J Chin Ceram Soc 25 (1997) 603-608
12. Demangeot F., Frandon J., Renucci M.A., Briot O., Gil B., and Aulombard R.L. Raman determination of the phonon deformation potentials in a-GaN. MRS Internet J Nitride Semicond Res 1 (1996) 23
13. Kuball M., Hayes J.M., Suski T., Jun J., Tan H.H., Williams J.S., et al. The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films. Fall 99 electronic proceedings: symposium W GaN and related alloys (1999), Materials Research Society, Boston, MA 1 W11.46
14. Kuball M., Demangeot F., Frandon J., Renucci M.A., Massies J., Grandjean N., et al. Thermal stability of GaN investigated by Raman scattering. Appl Phys Lett 73 (1998) 960-962
15. Kuball M., Demangeot F., Frandon J., Renucci M.A., Grandjean N., and Briot O. Thermal stability of GaN investigated by Raman scattering. MRS Internet J Nitride Semicond Res 4S1 (1999) G6.28
16. Alexson D., Bergman L., Dutta M., Kim K.W., Komirenko S., Nemanich R.J., et al. Confined phonons and phonon-mode properties of III-V nitrides with wurtzite crystal structure. Physica B 263-264 (1999) 510-513