Raman determination of the phonon deformation potentials in a-GaN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 1, Issue , 1996, Pages

  Demangeot, F ^a   Frandon, J ^a   Renucci, M A ^a   Briot, Olivier ^b   Gil, Bernard ^b   Aulombard, Roger Louis ^b  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b GES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRESSES; DEFORMATION POTENTIALS; FREQUENCY SHIFTS; PHONON MODES;

ANISOTROPY; BACKSCATTERING; CRYSTAL LATTICES; HETEROJUNCTIONS; LIGHT REFLECTION; RAMAN SPECTROSCOPY; SILICON; SPECTROMETERS; STRESSES; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 4043175577     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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