1.5 μm InGaAs/InGaAsP/InP quantum dot lasers operating cw at room temperature

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 3, Issue , 2005, Pages 277-279

  Kim, H D ^a   Jeong, W G ^a   Jang, J W ^b   Pyun, S H ^b   Hwang, M S ^c   Lee, D ^c   Stevenson, R ^d   Dapkus, P D ^d  

^a Sungkyunkwan University   (South Korea)

^b NanoEpi Technologies Corporation   (South Korea)

^c Chungnam National University   (South Korea)

^d University of Southern California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INGAAS; QUANTUM DOT LASERS; ROOM TEMPERATURE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

QUANTUM WELL LASERS;

EID: 33745243767     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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