Liquid-phase-epitaxy-grown in Asx Sb1-x GaAs for room-temperature 8-12 μm infrared detectors

Applied Physics Letters

Volumn 88, Issue 24, 2006, Pages

  Peng, Changtao ^a   Chen, Nuofu ^a,b   Gao, Fubao ^a   Zhang, Xingwang ^a   Chen, Chenlong ^a   Wu, Jinliang ^a,b   Yu, Yude ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF MECHANICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON MOBILITY; HALL EFFECT; INFRARED DETECTORS; OPTICAL PROPERTIES; PHOTOCONDUCTING MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE;

GAAS SUBSTRATES; PHOTORESPONSES; ROOM-TEMPERATURE;

LIQUID PHASE EPITAXY;

EID: 33745220526     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2209709     Document Type: Article

References (20)

1. S.-H. Wei and A. Zunger, Appl. Phys. Lett. 58, 2684 (1991).
2. G. P. Srivastava, J. L. Martins, and A. Zunger, Phys. Rev. B 31, 2561 (1985).
3. H. R. Jen, K. Y. Ma, and G. B. Stringfellow, Appl. Phys. Lett. 54, 1154 (1989).
4. S. R. Kurtz, L. R. Dawson, R. M. Biefeld, D. M. Follstaedt, and B. L. Doyle, Phys. Rev. B 46, 1909 (1992).
5. J.-l. Chyi, S. Kalem, N. S. Kumar, C. W. Litton, and H. Morkoc, Appl. Phys. Lett. 53, 1092 (1988).
6. C. G. Bethea, M. Y. Yen, B. F. Levine, K. K. Choi, and A. Y. Cho, Appl. Phys. Lett. 51, 1431 (1987).
7. M. Y. Yen, R. People, and K. W. Wecht, J. Appl. Phys. 64, 952 (1988).
8. M. Y. Yen, J. Appl. Phys. 64, 3306 (1988).
9. C. G. Bethea, B. F. Levine, M. Y. Yen, and A. Y. Cho, Appl. Phys. Lett. 53, 291 (1988).
10. R. M. Biefeld, J. Cryst. Growth 75, 255 (1986).
11. K. T. Huang, Y. Hsu, R. M. Cohen, and G. B. Stringfellow, J. Cryst. Growth 156, 311 (1995).
12. C. Besikci, Y. H. Choi, G. Labeyrie, E. Bigan, M. Razeghi, J. B. Cohen, J. Carsello, and V. P. Dravid, J. Appl. Phys. 76, 5820 (1994).
13. J. D. Kim, S. Kim, D. Wu, J. Wojkowski, J. Xu, J. Piotrowski, E. Bigan, and M. Razeghi, Appl. Phys. Lett. 67, 2645 (1995).
14. J. D. Kim, D. Wu, J. Wojkowski, J. Piotrowski, J. Xu, and M. Razeghi, Appl. Phys. Lett. 68, 99 (1996).
15. A. S. Popov, A. M. Koinova, and S. L. Tzeneva, J. Cryst. Growth 186, 338 (1998).
16. V. K. Dixit, B. Bansal, V. Venkataraman, H. L. Bhat, K. S. Chandrasekharan, and B. M. Arora, J. Appl. Phys. 96, 4989 (2004).
17. R. J. Egan, V. M. L. Chin, and T. L. Tansiey, J. Appl. Phys. 75, 2473 (1994).
18. J. C. Woolley and J. Warner, Can. J. Phys. 42, 1879 (1964).
19. See, e. g., S. Adachi, Physical Properties of III-V Semiconductor Compounds (Wiley, New York, 1992), p. 275.
20. Y. P. Varshni, Physica (Utrecht) 34, 149 (1967).