Study of d.c. reactive sputtering deposition AlN films used for GaAs MESFET passivation

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 20, Issue 8, 1999, Pages 644-649

  Cao, Xin ^a   Luo, Jinsheng ^a   Chen, Tangsheng ^a   Chen, Kejin ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SPUTTERING;

ALUMINUM NITRIDE FILMS; MESFET PASSIVATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033171655     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)