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Applied Physics A: Materials Science and Processing

Volumn 84, Issue 3, 2006, Pages 285-289

Growth of sputter-deposited Ni-Ti thin films: Effect of a SiO2 buffer layer

(6) Martins, R M S a Schell, N a Beckers, M a Mahesh, K K b Silva, R J C b Fernandes, F M B b

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

b DEPARTAMENTO DE CIÊNCIA DOS MATERIAIS (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; FILM GROWTH; INTERFACIAL ENERGY; PHASE TRANSITIONS; SILICON COMPOUNDS; SPUTTER DEPOSITION; STRESSES; SUBSTRATES; SYNCHROTRON RADIATION; TEXTURES; THIN FILMS;

BIAS VOLTAGE; BUFFER LAYER; EQUIATOMIC FILMS; TEXTURE DEVELOPMENT;

NICKEL ALLOYS;

EID: 33745161503 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-006-3626-9 Document Type: Article

Times cited : (17)

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