Crystallization process of TiNi thin films sputtered at elevated temperatures on Pt/Si Oxide/Si and Si oxide/Si substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 2 A, 2000, Pages 568-571

  Kim, Ick Jun ^a   Nanjo, Hiroshi ^a   Iijima, Takashi ^a   Abe, Toshihiko ^a  

^a TOHOKU NATL INDUST RES INSTITUTE   (Japan)

Author keywords

Adatom surface mobility; Crystallization; Interfacial adsorption; Orientation; Surface morphology; TiNi film

Indexed keywords

ADSORPTION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; CRYSTALLIZATION; DEPOSITION; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); MORPHOLOGY; PLATINUM; SILICON COMPOUNDS; SILICON WAFERS; THIN FILMS;

ADATOMS; SURFACE MOBILITY;

TITANIUM COMPOUNDS;

EID: 0033901903     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.568     Document Type: Article

References (10)

1. K. R. Collen, A. B. Ellis, J. D. Busch and A. D. Johnson: Mater. Res. Soc. Symp. Proc. 230 (1992) 97.
2. J. D. Busch, A. D. Johnson, C. H. Lee and D. A. Stevenson: J. Appl. Phys. 68 (1990) 6224.
3. K. Ikuda, H. Fujita, M. Ikeda and S. Yamashita: Proc. IEEE MEMS, Napa Valley, CA, (1990) 38.
4. K. R. C. Gisser, J. D. Busch, A. D. Johnson and A. B. Ellis: Appl. Phys. Leu. 61 (1992) 1632.
5. L. Hou, T. J. Pence and D. S. Grummon: Mater. Res. Soc. Symp. Proc. 360 (1995) 369.
6. R. N. Esfahani, G. J. Maclay and G. W. Zajac: Thin Solid Films 219 (1992) 257.
7. B. A. Movchan and A. V. Demchishin: Phys. Met. Metall. 28 (1969) 83.
8. J. A. Thomton: J. Vac. Sci. & Technol. 11 (1974) 666.
9. B. C. Allen and W. D. Kingery: Trans. Metall. Soc. AIME 215 (1959) 30.
10. C. R. Kurkjian and W. D. Kingery: J. Phys. Chem. 60 (1965) 961.