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Volumn 3, Issue , 2005, Pages 1911-1916

Power PiN diode model for PSPICE simulations

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; FINITE DIFFERENCE METHOD; MATHEMATICAL MODELS; POWER ELECTRONICS; PROBLEM SOLVING;

EID: 33745000329     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2005.1453314     Document Type: Conference Paper
Times cited : (17)

References (11)
  • 2
    • 0032071510 scopus 로고    scopus 로고
    • Status and trends of power semiconductor device models fo circuit simulation
    • R. Krauss and H.J. Mattausch, "Status and Trends of Power Semiconductor Device Models fo Circuit Simulation ", IEEE Trans. Power Electron. vol. 13, no. 3, pp. 452-465, 1998.
    • (1998) IEEE Trans. Power Electron. , vol.13 , Issue.3 , pp. 452-465
    • Krauss, R.1    Mattausch, H.J.2
  • 3
    • 49249136918 scopus 로고    scopus 로고
    • Power diode HYBRID model with forward and reverse recovery for use in circuit simulators
    • H. Goebel and K. Hoffman, "Power diode HYBRID model with forward and reverse recovery for use in circuit simulators ", in APEC'92, pp. 426-432.
    • APEC'92 , pp. 426-432
    • Goebel, H.1    Hoffman, K.2
  • 4
    • 84946967272 scopus 로고    scopus 로고
    • A new and accurate circuit-modeling approach for the power diode
    • T. Vogler and D. Schroeder, "A new and accurate circuit-modeling approach for the power diode", in PESC'92 Rec., pp. 870-876.
    • PESC'92 Rec. , pp. 870-876
    • Vogler, T.1    Schroeder, D.2
  • 8
    • 84936896634 scopus 로고
    • Reverse recovery processes processes in silicon power rectifiers
    • Aug.
    • H. Benda and E. Spenke, "Reverse recovery processes processes in silicon power rectifiers", Proc. IEEE, vol.55, pp. 1331-1354, Aug. 1967.
    • (1967) Proc. IEEE , vol.55 , pp. 1331-1354
    • Benda, H.1    Spenke, E.2
  • 9
    • 0018441065 scopus 로고
    • Spatial composition and injection dependence of recombination in silicon power devices structures
    • H. Schlangenotto, H. Maeder, "Spatial composition and injection dependence of recombination in silicon power devices structures", IEEE Trans. on Electron Devices, vol. 26, no. 3, pp. 191-200, 1979.
    • (1979) IEEE Trans. on Electron Devices , vol.26 , Issue.3 , pp. 191-200
    • Schlangenotto, H.1    Maeder, H.2
  • 10
    • 0028548833 scopus 로고
    • A new SPICE subcircuit model of Power PiN diode
    • A.G.M. Strollo, "A new SPICE subcircuit model of Power PiN diode ", IEEE Trans. Power Electron., vol.9, pp. 553-559, 1994.
    • (1994) IEEE Trans. Power Electron. , vol.9 , pp. 553-559
    • Strollo, A.G.M.1
  • 11
    • 33744987022 scopus 로고
    • Implementation and validation of a new diode model for circuit simulation
    • October
    • Ph. Leturcq, M.O. Berraies and J.-L. Massol, " Implementation and validation of a New Diode Model for Circuit Simulation ", LAAS Report 95421, October 1995.
    • (1995) LAAS Report 95421
    • Leturcq, Ph.1    Berraies, M.O.2    Massol, J.-L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.