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Volumn , Issue , 1992, Pages 426-432

Power diode HYBRID model with forward and reverse recovery for use in circuit simulators

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFERENTIAL EQUATIONS; POWER SEMICONDUCTOR DIODES; SIMULATORS; TIMING CIRCUITS;

EID: 49249136918     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.1992.228379     Document Type: Conference Paper
Times cited : (11)

References (6)
  • 2
    • 84946965083 scopus 로고
    • A unified model for the power MOSFET including the inverse diode and the parasitic bipolar transistor
    • C.H. Xu, D. Schröder, "A unified model for the power MOSFET including the inverse diode and the parasitic bipolar transistor", EPE 1989
    • (1989) EPE
    • Xu, C.H.1    Schröder, D.2
  • 3
    • 84946968369 scopus 로고
    • Reverse recovery model of power diodes
    • R. Kraus, "Reverse recovery model of power diodes", EPE MADEP 1991
    • (1991) EPE MADEP
    • Kraus, R.1
  • 4
    • 84936896634 scopus 로고
    • Reverse recovery processes in silicon power rectifiers
    • Aug
    • H. Benda, E. Spenke, "Reverse recovery processes in silicon power rectifiers", proceedings of IEEE, vol. 55, no. 8 pp. 1331-1354, Aug 1967
    • (1967) Proceedings of IEEE , vol.55 , Issue.8 , pp. 1331-1354
    • Benda, H.1    Spenke, E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.